Building memristor applications: from device model to circuit design

García Redondo, Fernando, López Vallejo, Marisa and Ituero Herrero, Pablo ORCID: https://orcid.org/0000-0001-6448-7936 (2014). Building memristor applications: from device model to circuit design. "IEEE Transactions on Nanotechnology", v. 13 (n. 6); pp. 1154-1162. ISSN 1536-125X. https://doi.org/10.1109/TNANO.2014.2345093.

Descripción

Título: Building memristor applications: from device model to circuit design
Autor/es:
  • García Redondo, Fernando
  • López Vallejo, Marisa
  • Ituero Herrero, Pablo https://orcid.org/0000-0001-6448-7936
Tipo de Documento: Artículo
Título de Revista/Publicación: IEEE Transactions on Nanotechnology
Fecha: Noviembre 2014
ISSN: 1536-125X
Volumen: 13
Materias:
Palabras Clave Informales: Design framework, memristor, process variations, simulation, spice
Escuela: E.T.S.I. Telecomunicación (UPM)
Departamento: Ingeniería Electrónica
Licencias Creative Commons: Reconocimiento - Sin obra derivada - No comercial

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Resumen

Since the memristor was first built in 2008 at HP Labs, no end of devices and models have been presented. Also, new applications appear frequently. However, the integration of the device at the circuit level is not straightforward, because available models are still immature and/or suppose high computational loads, making their simulation long and cumbersome. This study assists circuit/systems designers in the integration of memristors in their applications, while aiding model developers in the validation of their proposals. We introduce the use of a memristor application framework to support the work of both the model developer and the circuit designer. First, the framework includes a library with the best-known memristor models, being easily extensible with upcoming models. Systematic modifications have been applied to these models to provide better convergence and significant simulations speedups. Second, a quick device simulator allows the study of the response of the models under different scenarios, helping the designer with the stimuli and operation time selection. Third, fine tuning of the device including parameters variations and threshold determination is also supported. Finally, SPICE/Spectre subcircuit generation is provided to ease the integration of the devices in application circuits. The framework provides the designer with total control overconvergence, computational load, and the evolution of system variables, overcoming usual problems in the integration of memristive devices.

Más información

ID de Registro: 35984
Identificador DC: https://oa.upm.es/35984/
Identificador OAI: oai:oa.upm.es:35984
Identificador DOI: 10.1109/TNANO.2014.2345093
URL Oficial: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?...
Depositado por: Memoria Investigacion
Depositado el: 01 Jul 2015 16:25
Ultima Modificación: 01 Jul 2015 16:25
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