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Back gating of a two-dimensional hole gas in a SiGe quantum well
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Emeleus, C. J., Sadeghzadeh, Mohammad Ali, Phillips, P. J. (Peter J.), Parker, Evan H. C., Whall, Terry E., Pepper, M. and Evans, A. G. R. (1997) Back gating of a two-dimensional hole gas in a SiGe quantum well. Applied Physics Letters, Vol.70 (No.14). pp. 1870-1872. doi:10.1063/1.118729 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.118729
Abstract
A device comprising a low-resistivity, n-type, Si substrate as a back gate to a p-type (boron), remote-doped, SiGe quantum well has been fabricated and characterized. Reverse and forward voltage biasing of the gate with respect to the two-dimensional hole gas in the quantum well allows the density of holes to be varied from 8 × 1011 cm–2 down to a measurement-limited value of 4 × 1011 cm–2. This device is used to demonstrate the evolution with decreasing carrier density of a re-entrant insulator state between the integer quantum Hall effect states with filling factors 1 and 3.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Silicon alloys, Germanium alloys, Quantum Hall effect, Quantum wells, Semiconductors | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 7 April 1997 | ||||
Dates: |
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Volume: | Vol.70 | ||||
Number: | No.14 | ||||
Page Range: | pp. 1870-1872 | ||||
DOI: | 10.1063/1.118729 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) |
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