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Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate
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King, P. J. C., Breese, Mark B. H., Smulders, P. J. M., Wilkinson, A. J., Booker, G. R., Parker, Evan H. C. and Grime, G. W. (1995) Evidence from ion channeling images for the elastic relaxation of a Si0.85Ge0.15 layer grown on a patterned Si substrate. Applied Physics Letters, Vol.67 (No.24). pp. 3566-3568. doi:10.1063/1.115319 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.115319
Abstract
We demonstrate the ability of ion channeling analysis using a scanned, focused, 2 MeV proton beam from a nuclear microprobe to detect and quantify elastic relaxation in a Si1 – xGex layer grown on a Si substrate. Channeling images of a sample consisting of a Si0.85Ge0.15 layer grown on a substrate patterned to produce 10 µm wide raised mesas were produced which revealed lattice plane bending of up to 0.25°, consistent with elastic relaxation of the epilayer. The channeling results are compared with those produced from electron backscattering diffraction.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Germanium alloys, Silicon alloys, Epitaxy, Ion channels, Elasticity | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 11 December 1995 | ||||
Dates: |
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Volume: | Vol.67 | ||||
Number: | No.24 | ||||
Page Range: | pp. 3566-3568 | ||||
DOI: | 10.1063/1.115319 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Science and Engineering Research Council (Great Britain) (SERC) |
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