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High-frequency performance of Schottky source/drain silicon pMOS devices
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Raskin, J.-P., Pearman, D. J., Pailloncy, G., Larson, J. M., Snyder, J., Leadley, D. R. (David R.) and Whall, Terry E. (2008) High-frequency performance of Schottky source/drain silicon pMOS devices. IEEE Electron Device Letters, Vol.29 (No.4). pp. 396-398. doi:10.1109/LED.2008.918250 ISSN 0741-3106.
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Official URL: http://dx.doi.org/10.1109/LED.2008.918250
Abstract
A radio-frequency performance of 85-nm gate-length p-type Schottky barrier (SB) with PtSi source/drain materials is investigated. The impact of silicidation annealing temperature on the high-frequency behavior of SB MOSFETs is analyzed using an extrinsic small-signal equivalent circuit. It is demonstrated that the current drive and the gate transconductance strongly depend on the silicidation anneal temperature, whereas the unity-gain cutoff frequency of the measured devices remains nearly unchanged.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Metal oxide semiconductor field-effect transistors -- Research, Metal semiconductor field-effect transistors -- Research, Annealing of metals -- Research, Electric circuits, Equivalent | ||||
Journal or Publication Title: | IEEE Electron Device Letters | ||||
Publisher: | IEEE | ||||
ISSN: | 0741-3106 | ||||
Official Date: | 21 March 2008 | ||||
Dates: |
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Volume: | Vol.29 | ||||
Number: | No.4 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 396-398 | ||||
DOI: | 10.1109/LED.2008.918250 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) |
Data sourced from Thomson Reuters' Web of Knowledge
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