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Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films
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Liu, Xue-Chao, Chen, Zhi-Zhan, Shi, Er-Wei, Liao, Da-Qian and Zhou, Ke-Jin (2011) Room-temperature anomalous Hall effect and magnetroresistance in (Ga, Co)-codoped ZnO diluted magnetic semiconductor films. Chinese Physics B, Vol.20 (No.3). 037501. doi:10.1088/1674-1056/20/3/037501 ISSN 1674-1056.
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Official URL: http://dx.doi.org/10.1088/1674-1056/20/3/037501
Abstract
This paper reports that the (Ga, Co)-codoped ZnO thin films have been grown by inductively coupled plasma enhanced physical vapour deposition. Room-temperature ferromagnetism is observed for the as-grown thin films. The x-ray absorption fine structure characterization reveals that Co(2+) and Ga(3+) ions substitute for Zn(2+) ions in the ZnO lattice and exclude the possibility of extrinsic ferromagnetism origin. The ferromagnetic (Ga, Co)-codoped ZnO thin films exhibit carrier concentration dependent anomalous Hall effect and positive magnetoresistance at room temperature. The mechanism of anomalous Hall effect and magneto-transport in ferromagnetic ZnO-based diluted magnetic semiconductors is discussed.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Journal or Publication Title: | Chinese Physics B | ||||
Publisher: | Institute of Physics Publishing Ltd. | ||||
ISSN: | 1674-1056 | ||||
Official Date: | March 2011 | ||||
Dates: |
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Volume: | Vol.20 | ||||
Number: | No.3 | ||||
Page Range: | 037501 | ||||
DOI: | 10.1088/1674-1056/20/3/037501 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Funder: | National Natural Science Foundation of China (NSFC) | ||||
Grant number: | 50772122 51002176 (NSFC) |
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