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Transition from electron accumulation to depletion at InGaN surfaces
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Veal, T. D., Jefferson, Paul Harvey, Piper, L. F. J., McConville, C. F., Joyce, T. B., Chalker, P. R., Considine, L., Lu, H. and Schaff, William Joseph (2006) Transition from electron accumulation to depletion at InGaN surfaces. Applied Physics Letters, Vol.89 (No.20). p. 202110. doi:10.1063/1.2387976 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2387976
Abstract
The composition dependence of the Fermi-level pinning at the oxidized (0001) surfaces of n-type InxGa1−xN films (0<=x<=1) is investigated using x-ray photoemission spectroscopy. The surface Fermi-level position varies from high above the conduction band minimum (CBM) at InN surfaces to significantly below the CBM at GaN surfaces, with the transition from electron accumulation to depletion occurring at approximately x=0.3. The results are consistent with the composition dependence of the band edges with respect to the charge neutrality level.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Indium compounds, Gallium compounds, Wide gap semiconductors, Semiconductor films, Fermi surfaces, X-ray photoelectron spectroscopy, Conduction band, Stoichiometry | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 14 November 2006 | ||||
Dates: |
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Volume: | Vol.89 | ||||
Number: | No.20 | ||||
Page Range: | p. 202110 | ||||
DOI: | 10.1063/1.2387976 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Engineering and Physical Sciences Research Council (EPSRC) | ||||
Grant number: | GR/S14252/01 (EPSRC), EP/C535553/01 (EPSRC) |
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