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Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering
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Quinn, P. D., Wilson, Neil R., Hatfield, S. A., McConville, C. F. (Chris F.), Bell, Gavin R., Noakes, T. C. Q., Bailey, P., Al-Harthi, S. and Grad, F. (2005) Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering. Applied Physics Letters, Vol.87 (No.15). p. 153110. doi:10.1063/1.2099533 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.2099533
Abstract
The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Indium compounds, Gallium arsenide semiconductors, Quantum dots, Epitaxy | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 5 October 2005 | ||||
Dates: |
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Volume: | Vol.87 | ||||
Number: | No.15 | ||||
Page Range: | p. 153110 | ||||
DOI: | 10.1063/1.2099533 | ||||
Status: | Peer Reviewed | ||||
Access rights to Published version: | Open Access (Creative Commons) | ||||
Funder: | Royal Society (Great Britain), Engineering and Physical Sciences Research Council (EPSRC) |
Data sourced from Thomson Reuters' Web of Knowledge
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