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oaioai:HAL:hal-00140578v1

Simulation and experimental comparison of GGNMOS and LVTSCR protection cells under ElectroStatic Discharges

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Publication date
1 September 2001
Publisher
'Elsevier BV'

Abstract

International audienceTo assess the capabilities of the device simulation tool in the field of ElectroStatic Discharges (ESD), two protection structures were studied: a Grounded Gate NMOS transistor (GGNMOS) and a Low Voltage Threshold Silicon Controlled Rectifier (LVTSCR). Both compounds were tested with the Transmission Line Pulse test method and simulated with the software Dessis-ISE. Hence, checking the behaviour of each device in terms of ESD has been possible. (C) 2001 Elsevier Science Ltd. All rights reserved

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HAL Descartes

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Last time updated on 14/04/2021

This paper was published in HAL Descartes.

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