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oaioai:HAL:hal-02002261v1

Low frequency noise statistical characterization of 14nm FDSOI technology node

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Publication date
26 January 2015
Publisher
IEEE
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    Abstract

    session 10: Advanced characterization techniquesInternational audienceIn this paper, we performed a statistical analysis of the low-frequency noise (LFN) in 14nm FDSOI n-MOS devices. Front and back gate interfaces were characterized, revealing an equal contribution to the total noise level. Finally, the LFN variability is analyzed and a comparison to previous CMOS technologies is presented

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    HAL Université de Savoie

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    Last time updated on 02/02/2019

    This paper was published in HAL Université de Savoie.

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