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oaioai:casi.ntrs.nasa.gov:19700000479

New method for photoresist stripping

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Publication date
1970
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Abstract

Vacuum dehydration of negatively working photoresist eliminates trace contamination of conventional stripping methods. The semiconductor substrate is coated with photoresist, exposed, developed, cured, and etched, and then placed in a vacuum. Following dehydration, the resist film is removable with ordinary solvents

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This paper was published in NASA Technical Reports Server.

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