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oaioai:casi.ntrs.nasa.gov:19850003149

Research on gallium arsenide diffused junction solar cells

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1984
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Abstract

The feasibility of using bulk GaAs for the fabrication of diffused junction solar cells was determined. The effects of thermal processing of GaAs was studied, and the quality of starting bulk GaAs for this purpose was assessed. These cells are to be made by open tube diffusion techniques, and are to be tested for photovoltaic response under AMO conditions

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This paper was published in NASA Technical Reports Server.

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