Efficient numerics for thermally-assisted trap-limited conduction in chalcogenides

Abstract

The hydrodynamic model for the trap-limited conduction regime in amorphous materials, used in the description of phase-change memory devices, is re-examined from the viewpoint of numerical efficiency. Among other features, the approach presented here avoids the calculation of integrals involving the distribution function during the iterative solution, and makes the proposed solution scheme suitable for incorporation into general-purpose device simulators