Localized Charge Transfer Process and Surface Band Bending in Methane Sensing by GaN Nanowires

Abstract

The physicochemical processes at the surfaces of semiconductor nanostructures involved in electrochemical and sensing devices are strongly influenced by the presence of intrinsic or extrinsic defects. For revelation of the surface controlled sensing mechanism, intentional lattice oxygen defects are created on the surfaces of GaN nanowires for the elucidation of charge transfer process in methane (CH₄) sensing. Experimental and simulation results of electron energy loss spectroscopy (EELS) studies on oxygen rich GaN nanowires confirmed the possible presence of 2­(O_N) and V_Ga–3O_N defect complexes. A global resistive response for sensor devices of ensemble nanowires and a localized charge transfer process in single GaN nanowires are studied by <i>in situ</i> scanning Kelvin probe microscopy (SKPM). A localized charge transfer process, involving the V_Ga–3O_N defect complex on a nanowire surface, is attributed to controlling the global gas sensing behavior of the oxygen rich ensemble GaN nanowires