Enhancements in specimen preparation of Cu In,Ga S,Se 2 thin films

Abstract

When producing slices from Cu In,Ga S,Se 2 thin films for solar cells by use of a focused ion beam FIB , agglomerates form on the Cu In,Ga S,Se 2 surfaces, which deteriorate substantially the imaging and analysis in scanning electron microscopy. Similar problems are also experienced when depth profiling Cu In,Ga S,Se 2 thin films by means of glow discharge or secondary ion mass spectrometry. The present work shows that the agglomerates are composed of mainly Cu, and that their formation may be impeded considerably by either cooling of the sample or by use of reactive gases during the ion beam sputtering. The introduction of XeF2 during FIB slicing resulted in excellent images, in which the microstructures of most layers in the Cu In,Ga S,Se 2 thin film stack are visible, including the microstructure of the 20 nm thin MoSe2 layer. Acquisition of high quality two dimensional and also three dimensional electron backscatter diffraction data was possible. The present work gives a basis for enhanced SEM imaging and analysis not only in the case of Cu In,Ga S,Se 2 thin films but also when dealing with further material systems exhibiting similar formations of agglomerate