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oaioai:ir.impcas.ac.cn:113462/2487

高电荷态离子与Si(110)晶面碰撞的沟道效应研究

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2008
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Abstract

不同电荷态低速离子(Arq+,Pbq+)轰击Si(110)晶面,测量不同入射角情况下的次级粒子的产额.通过比较溅射产额与入射角的关系,证实沟道效应的存在.高电荷态离子与Si相互作用产生的沟道效应说明溅射产额主要是由动能碰撞引起的.在小角入射条件下,高电荷态离子能够增大溅射产额.当高电荷态离子以40°—50°入射时,存在势能越高溅射产额越大的势能效应

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Institutional Repository of Institute of Modern Physics, CAS

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Last time updated on 24/05/2016

This paper was published in Institutional Repository of Institute of Modern Physics, CAS.

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