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oaioai:ir.nimte.ac.cn/:174433/1348

电沉积CoNiMo(P)非晶软磁合金薄膜的工艺优化

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Publication date
1 January 2007
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Abstract

铜基底上电沉积制备了CoNiMo(P)非晶软磁合金薄膜。设计正交实验,并对实验数据进行误差分析,得到制备CoNiMo(P)非晶软磁合金薄膜的优化工艺条件为。实验表明,优化条件下制备的沉积态CoNiMo(P)合金薄膜具有非晶态结构、膜面光亮、平整、致密。磁性测量结果显示:CoNiMo(P)合金薄膜的易磁化轴平行于膜面,平行方向上饱和磁化强度(Ms)为142 emu g-1,矫顽力(Hc)为25Oe.与相同条件下制备的纯钴薄膜相比,Ms//减小2％,而Hc减小84％,软磁性得到了改善

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Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS

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This paper was published in Institutional Repository of Ningbo Institute of Material Technology & Engineering, CAS.

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