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采用宽脉冲激光器光源扫描辐照制作黑硅材料的方法

Abstract

本发明公开了一种采用宽脉冲激光器光源扫描辐照制作黑硅材料的方法,该方法包括:步骤1:将硅片置于硫系物质环境中;步骤2:利用经过透镜聚焦的激光扫描辐照硅片表面,形成具有硅微锥、硅微粒和硅微洞的黑硅材料。利用本发明,所使用的激光脉冲宽度为纳秒或微秒或毫秒甚至连续直流模式,波长为1064nm。用这类宽脉冲激光器光源扫描置于硫系物质环境下的硅晶片,可以制作出对全太阳光谱有强吸收作用的硅微锥、微粒和微孔的黑硅微结构材料

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Knowledge Repository of SEMI,CAS

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Last time updated on 10/07/2018

This paper was published in Knowledge Repository of SEMI,CAS.

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