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Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

Abstract

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER<HD-FEC after 644-km dispersion-compensated transmission for all channels of a 5xWDM 16-QAM single-polarization signa

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This paper was published in Online Research Database In Technology.

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