Repository landing page

We are not able to resolve this OAI Identifier to the repository landing page. If you are the repository manager for this record, please head to the Dashboard and adjust the settings.
research
oaioai:repository.edulll.gr/edulll:10795/2976

Charging and Discharging Processes in AlN Dielectric Films Deposited by Plasma Assisted Molecular Beam Epitaxy

Authors
Publication date
1 January 2012
Publisher
Doi

    Abstract

    In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal – Insulator – Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current – voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping

    Similar works

    Full text

    thumbnail-image

    Digital Repository of Hellenic Managing Authority of the Operational Programme "Education and Lifelong Learning" (EDULLL)

    redirect
    oaioai:repository.edulll.gr/edull...
    Last time updated on 09/11/2016

    This paper was published in Digital Repository of Hellenic Managing Authority of the Operational Programme "Education and Lifelong Learning" (EDULLL).

    Having an issue?

    Is data on this page outdated, violates copyrights or anything else? Report the problem now and we will take corresponding actions after reviewing your request.