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Using temperature as observable of the frequency response of RF CMOS amplifiers
Abstract
The power dissipated by the devices of an integrated circuit can be considered a signature of the circuit's performance. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements on the silicon surface. In this paper, the frequency response of a RF LNA is observed by measuring spectral components of the sensed temperature. Results prove that temperature can be used to debug and observe figures of merit of analog blocks in a RFIC. Experimental measurements have been done in a 0.25 mum CMOS process. Laser probing techniques have been used as temperature sensors; specifically, a thermoreflectometer and a Michaelson interferometer.Peer ReviewedPostprint (author's final draft- Conference report
- Àrees temàtiques de la UPC::Enginyeria electrònica::Microelectrònica
- Radio frequency identification systems
- Frequency response
- Radio frequency
- Radiofrequency amplifiers
- Temperature sensors
- Temperature measurement
- Circuit optimization
- Energy consumption
- Silicon
- Frequency measurement
- Integrated circuit measurements
- Sistemes d'identificació per radiofreqüència