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Towards bose-einstein condensation of semiconductor excitons: The biexciton polarization effect

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Publication date
1 January 2009
Publisher
College Park, MD : American Physical Society
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    Abstract

    We theoretically predict a strong influence of stimulated exciton-exciton scattering on semiconductor luminescence. The stimulated scattering causes circularly polarized instead of unpolarized emission at the biexciton emission line in a degenerate gas of partly spin polarized excitons. The biexciton polarization effect increases with increasing exciton densities and decreasing temperatures and approaches almost unity in the ultimate case of Bose-Einstein condensation. Time- and polarization-resolved luminescence measurements evidence the biexciton polarization effect both in ZnSe and GaAs quantum wells. © 2009 The American Physical Society

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    Institutionelles Repositorium der Leibniz Universität Hannover

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    Last time updated on 21/11/2017

    This paper was published in Institutionelles Repositorium der Leibniz Universität Hannover.

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